FCPF260N60E-F154 Datasheet, MOSFET, ON Semiconductor

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FCPF260N60E-F154 Features and benefits

* 650 V @ TJ = 150°C
* Typ. RDS(on) = 220 mW
* Ultra Low Gate Charge (Typ. Qg = 48 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 129 pF)
*.

FCPF260N60E-F154 Application

* Computing / Display Power Supplies
* Telecom / Server Power Supplies
* Industrial Power Supplies
* Lig.

FCPF260N60E-F154 Description

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize.

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